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DS1330Y/AB
POWER-DOWN/POWER-UP TIMING
(T A : See Note 10)
PARAMETER
V CC Fail Detect to CE and WE Inactive
SYMBOL
t PD
MIN
TYP
MAX
1.5
UNITS
μ s
NOTES
11
V CC slew from V TP to 0V
t F
150
μ s
V CC Fail Detect to RST Active
V CC slew from 0V to V TP
V CC Valid to CE and WE Inactive
V CC Valid to End of Write Protection
t RPD
t R
t PU
t REC
150
15
2
125
μ s
μ s
ms
ms
14
V CC Valid to RST Inactive
V CC Valid to BW Valid
t RPU
t BPU
150
200
350
1
ms
s
14
14
BATTERY WARNING TIMING
(T A : See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Battery Test Cycle
Battery Test Pulse Width
Battery Test to BW Active
t BTC
t BTPW
t BW
24
1
1
hr
s
s
(T A = +25 ° C)
PARAMETER
Expected Data Retention Time
SYMBOL
t DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. WE is high for a Read Cycle.
2. OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high-impedance state.
3. t WP is specified as the logical AND of CE and WE . t WP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. t DS is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output
buffers remain in a high-impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in high-impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
8 of 10
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相关PDF资料
DS1345WP-100IND+
IC NVSRAM 1MBIT 100NS 34PCM
DS1345YP-70IND+
IC NVSRAM 1MBIT 70NS 34PCM
DS1350WP-100IND+
IC NVSRAM 4MBIT 100NS 34PCM
DS1350YP-70IND+
IC NVSRAM 4MBIT 70NS 34PCM
DS1609-50+
IC SRAM 2KBIT 50NS 24DIP
DS2016R-100+
IC SRAM 16KBIT 100NS 24SOIC
DS2030L-100#
IC NVSRAM 256KBIT 100NS 256BGA
DS2030W-100#
IC NVSRAM 256KBIT 100NS 256BGA
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